Modeling of threshold voltage for undoped surrounding gate MOSFET: A Gaussian approach

Author

Roy, Palash ; Syamal, Binit ; Mohankumar, N. ; Sarkar, C.K.

Author_Institution

Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

1

Lastpage

4

Abstract

We have developed analytically a threshold voltage model and explored the threshold voltage roll-off and drain-induced barrier lowering (DIBL) effects for undoped surrounding-gate (SG) MOSFETs. The model is derived by applying the Gauss law by considering an elemental area of the channel rather than using Poisson equation as implemented earlier. For this threshold voltage model, the threshold voltage roll-off and DIBL effects have been analyzed and compared with 3-D numerical simulation results for different channel lengths, channel thickness and oxide thickness and a very good agreement between them has been observed.

Keywords

Gaussian processes; MOSFET; Poisson equation; numerical analysis; semiconductor device models; 3-D numerical simulation; Gaussian approach; Poisson equation; channel lengths; channel thickness; drain-induced barrier lowering effects; oxide thickness; threshold voltage model; undoped surrounding gate MOSFET; Argon; Boundary conditions; CMOS technology; Gaussian channels; MOSFET circuits; Numerical simulation; Poisson equations; Semiconductor films; Silicon; Threshold voltage; Drain induced barrier lowering (DIBL); Surrounding-Gate (SG); Threshold voltage; Threshold voltage roll-off;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4244-5073-2

Type

conf

Filename

5407101