Power Dissipation in SWCNT-interconnect

This paper addresses power dissipation in single walled carbon nanotube bundle interconnect for VLSI applications at 22 nm technology node. SPICE simulation shows that due to high capacitance, SWCNT-bundle interconnect is of higher power dissipation than copper interconnect. Power dissipation decreases with increase in tube diameter of the constituent SWCNTs. CNT interconnect resistance and inductance increases with increase in diameter and length. On the other hand, with increase in tube diameter interconnect capacitance decreases. However, increase in interconnect length increases the capacitance. Our analysis shows that choice of tube diameter is critical for good power management.