A compact threshold voltage model for narrow channel nano-scale MOSFETs

Author

Pandit, Srabanti ; Sarkar, Chandan Kumar

Author_Institution

Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

1

Lastpage

4

Abstract

This paper presents a compact threshold voltage model for narrow channel MOSFETs for the purpose of VLSI circuit simulation. A nano-scale trench isolated MOSFET has been considered whose gate length and width are in the sub 65 nm regime. The developed model has been validated by comparing the results predicted from the derived model with those obtained using the device simulator of TCAD Sentaurus.

Keywords

MOS integrated circuits; VLSI; integrated circuit modelling; isolation technology; nanotechnology; technology CAD (electronics); TCAD Sentaurus; VLSI circuit simulation; compact threshold voltage model; device simulator; gate length; nanoscale trench isolation; narrow channel nanoscale MOSFETs; size 65 nm; Analytical models; Circuit simulation; Computational modeling; Gaussian channels; Integrated circuit modeling; MOSFETs; Nanoscale devices; Predictive models; Threshold voltage; Very large scale integration; compact model; edge effect; narrow channel; trench isolated MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4244-5073-2

Type

conf

Filename

5407256