Application of X-Ray scattering techniques for semiconductor-based quantum structures

Author

Sharma, Manjula ; Sanyal, Milan K. ; Saha, Biswajit ; Chakraborty, Purushottam

fYear

2009

fDate

14-16 Dec. 2009

Firstpage

1

Lastpage

3

Abstract

Si-Ge superlattice structures have been prepared by Molecular Beam Epitaxy (MBE) and investigated using X-Ray scattering techniques. The satellite peaks occurring in X-Ray reflectivity and X-Ray diffraction give information about the periodicity of the superlattice. Calculations of the dynamical diffraction reveal that the Ge layer is under compressive strain.

Keywords

X-ray detection; X-ray reflection; X-ray scattering; compressive strength; elemental semiconductors; germanium; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor superlattices; silicon; MBE; Si-Ge; X-Ray diffraction; X-ray reflectivity; X-ray scattering techiques; compressive strain; molecular beam epitaxy; satellite peaks; semiconductor-based quantum structures; superlattice structures; Capacitive sensors; Molecular beam epitaxial growth; Nonhomogeneous media; Nuclear physics; Optical reflection; Quantum computing; Reflectivity; Superlattices; X-ray diffraction; X-ray scattering; Compressive Strain; MBE; Si-Ge Superlattice; X-Ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4244-5073-2

Type

conf

Filename

5407332