DocumentCode
513629
Title
Poly Encapsulated LOCOS Lateral Isolation for 0.25 μm CMOS
Author
Badenes, Gonçal ; Rooyackers, Rita ; Deferm, Ludo
Author_Institution
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
193
Lastpage
196
Abstract
In this paper the feasibility of a lateral isolation scheme based on poly encapsulated LOCOS for 0.25 μm CMOS technologies is demonstrated. Excellent bird´s beak dimension control is achieved with limited process complexity. The influence of field oxide recess and presence of a cavity on bird´s beak dimensions is investigated. Oxide thinning effects are studied. Finally, good gate oxide integrity and narrow-channel behaviour results on 0.25 μm CMOS lots are shown.
Keywords
Amorphous silicon; CMOS technology; Fabrication; Hafnium; Isolation technology; Manufacturing; Oxidation; Resists; Scalability; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5435864
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