• DocumentCode
    513685
  • Title

    Band-Band Tunneling in High-Voltage Varactor Diodes

  • Author

    Buyk, O.J.A. ; Huisman, F.R.J. ; Hurkx, G.A.M.

  • Author_Institution
    Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
  • fYear
    1995
  • fDate
    25-27 Sept. 1995
  • Firstpage
    525
  • Lastpage
    528
  • Abstract
    This paper discusses the reverse I-V characteristics of hyperabrupt silicon varactor diodes designed to have a high capacitance per unit area. These diodes may exhibit a reverse current which is dominated by band-band tunneling, although their breakdown voltage is much higher than 6Eg/q, where 6Eg is the bandgap of silicon.
  • Keywords
    Breakdown voltage; Capacitance; Impurities; Leakage current; Photonic band gap; Semiconductor diodes; Silicon; Temperature dependence; Tunneling; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
  • Conference_Location
    The Hague, The Netherlands
  • Print_ISBN
    286332182X
  • Type

    conf

  • Filename
    5435936
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513685