DocumentCode
513753
Title
Experimental Method to Extract A.C. Collector-Base Resistance from SiGe HBT´s
Author
Hamel, J.S. ; Alison, R. ; Blaikie, R.
Author_Institution
Department of Electronics and Computer Science, University of Southampton, Southampton, England,
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
753
Lastpage
756
Abstract
A simple experimental technique is presented which enables the accurate extraction of the a.c. collector-base resistance that models the impact of neutral base recombination on the a.c. output resistance of bipolar transistors.
Keywords
Bipolar transistors; Boron; Current measurement; Electric resistance; Electrical resistance measurement; Gain measurement; Germanium silicon alloys; Silicon germanium; Spontaneous emission; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5436025
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