DocumentCode
513826
Title
2D Simulation of Velocity Overshoot in GaAs HBT
Author
Maneux, C. ; Labat, N. ; Fouillat, P. ; Touboul, A. ; Danto, Y.
Author_Institution
Laboratoire IXL, URA 846-CNRS - Universite Bordeaux I, 351 Cours de la Lib?ration, 33405 TALENCE, France
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
559
Lastpage
562
Abstract
The expression of the current density equation in AlGaAs/GaAs HBT in presence of carrier density and temperature gradients, as well as electric field, is derived from the drift diffusion equation. A new term taking into account the electron relaxation time is shown to be comparable in magnitude to the other terms in the current-flow equation. This term allows to point out the velocity overshoot effect.
Keywords
Current density; Electron mobility; Equations; Gallium arsenide; Heterojunction bipolar transistors; Kinetic energy; Lattices; Steady-state; Temperature; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5436166
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