• DocumentCode
    513839
  • Title

    A New Non-Quasi-Static SOI MOSFET Model Dedicated to Analog Circuit Simulation

  • Author

    Robilliart, Etienne ; Dubois, Emmanuel

  • Author_Institution
    IEMN/ISEN UMR CNRS 9929, Avenue Poincaré, Cité Scientifique, BP 69, 59652 Villeneuve d´´Ascq Cedex, France Tel: (+33) 20.19.79.17 Fax: (+33) 20.19.78.84 e-mail: ero@isen.fr
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    483
  • Lastpage
    486
  • Abstract
    A new Non-Quasi-Static (NQS) model of SOI-MOSFETs is presented in this paper. This model, based on the charge sheet approach, is valid for all regions of operation. Excellent agreement is found with 2D device simulations both under static and fast transient conditions. This new model proves to be useful to simulate analog circuits where NQS phenomena have a first order effect on circuit performance.
  • Keywords
    Analog circuits; Capacitance; Circuit optimization; Circuit simulation; Electronic mail; MOSFET circuits; Poisson equations; Silicon on insulator technology; Strips; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436183
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513839