• DocumentCode
    513869
  • Title

    Electron Velocity Overshoot in Strained Si/Si1-xGex MOSFETs

  • Author

    Gamiz, F. ; López-Villanueva, J.A. ; Roldán, J.B. ; Carceller, J.E. ; Cartujo, P.

  • Author_Institution
    Departamento de Electr?nica y Tecnolog?a de Computadores, Universidad de Granada. Facultad de Ciencias., 18071 GRANADA (SPAIN)
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    411
  • Lastpage
    414
  • Abstract
    Electron transport properties of strained-Si on relaxed Si1-xGex channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-state high-longitudinal field transport regimes have been described in detail. Electron-velocity-overshoot effects are also studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts.
  • Keywords
    Effective mass; Electron mobility; Light scattering; MOSFETs; Monte Carlo methods; Phonons; Quantization; Silicon; Steady-state; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436227
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513869