• DocumentCode
    513880
  • Title

    Subthreshold Source-Side Injection (S3I): A Promising Programming Mechanism for Scaled-Down, Low-Power Flash Memories

  • Author

    Houdt, J. Van ; Blauwe, J. De ; Wellekens, D. ; Haspeslagh, L. ; Deferm, L. ; Groeseneken, G. ; Maes, H.E.

  • Author_Institution
    IMEC - Kapeldreef 75 - B3001 Leuven - Belgium
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    131
  • Lastpage
    134
  • Abstract
    Flash memory has recently become the fastest growing segment in the semiconductor memory market. This is due to its high scalability which has already reduced cost/Megabit below that of dRAM´s. However, Flash cells based on tunnelling require relatively high voltages to be generated on chip, while the channel-hot-electron (drain) injection (CHEI) alternative consumes a high current for programming, which inhibits supply voltage scaling. In this paper a novel Subthreshold Source-Side Injection (S3I) mechanism for future generation Flash programming is presented, which could well overcome these drawbacks. S3I is shown to be a very promising mechanism for future low-power Flash memories.
  • Keywords
    CMOS technology; Character generation; Charge carrier processes; Current measurement; Electrons; Energy consumption; Flash memory; Scalability; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436240
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513880