DocumentCode
513894
Title
Monte Carlo studies on hole mobility in heavily doped n-type Silicon
Author
Pan, Y. ; Kleefstra, M.
Author_Institution
Delft University of Technology, Department of Electrical Engineering, Electrical Materials Laboratory, P.O. Box 5031, DELFT, the Netherlands.
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
49
Lastpage
52
Abstract
The minority hole mobility in heavily doped n-type silicon is calculated by means of the Monte Carlo technique from 77K to 350K. Hole-electron scattering and hole-plasmon scattering are included in the simulation. The calculated mobility, based on the Born approximation with the third-body exclusion, is close to the recently measured mobility. The temperature dependence of the calculated mobility is in approximate agreement with the measurements.
Keywords
Acoustic scattering; Approximation methods; Impurities; Monte Carlo methods; Optical scattering; Particle scattering; Phonons; Silicon; Tail; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5436255
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