Thin SIMOX SOI material for half-micron CMOS

The properties of half-micron CMOS devices fabricated on thin film SIMOX SOI with different material quality will be presented. The gate oxide quality, diode leakage current and breakdown voltage of transistors will be shown. The influence of LDD dope and TiSi2 salicide on the parasitic bipolar transistor breakdown is presented. Temperature measurements on SOI and bulk transistors are presented which show an increased heating effect for thin film SOI transistors.