DocumentCode
513927
Title
A new stacked capacitor cell for 64 Mbit DRAMs
Author
Kim, Cheon Soo ; Lee, Jin Ho ; Lee, Kyu Hong ; Kim, Dae Yong ; Lee, Jin Hyo ; Kim, Chung Duk
Author_Institution
Memory Div., Electronics & Telecommunication Research Institute, P.O. Box 8, Daedog Science Town, Daejeon, Koren
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
457
Lastpage
460
Abstract
A new stacked capacitor memory cell named a Cup-shaped Storage Node (CSN) is proposed for high density DRAMs. The storage capacitance of the cell is enhanced by stacking the cup shaped polysilicon layer. So single and double layered stacked cell structures can be fabricated with simple extra process steps. The usefulness of the fabrication process and electrical characteristics of this novel cell structure has been demonstrated.
Keywords
Capacitance; Capacitors; Cities and towns; Electric variables; Electrons; Etching; Fabrication; Random access memory; Silicon; Stacking;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436319
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