• DocumentCode
    513935
  • Title

    Epitaxial regrowth in double-diffused polysilicon emitters

  • Author

    Williams, J.D. ; Ashburn, P. ; Moisewitsch, N E ; Gold, D P ; Whitehurst, J. ; Booker, G.R. ; Wolstenholme, G R

  • Author_Institution
    Dept of Electronics & Computer Science, University of Southampton.
  • fYear
    1990
  • fDate
    10-13 Sept. 1990
  • Firstpage
    381
  • Lastpage
    384
  • Abstract
    A study is made of epitaxial regrowth of polysilicon in double-diffused polysilicon emitter bipolar transistors. TEM and RBS are used to assess the extent of the epitaxial regrowth, and a simple sheet resistance measurement is used to give a sensitive measure of the amount of regrowth. The temperature of the RTA used for the second diffusion is varied between 950 and 1150°C, with epitaxial regrowth occurring for temperatures at and above 1050°C. Polysilicon emitter bipolar transistors are fabricated to demonstrate the electrical effects of the epitaxial regrowth.
  • Keywords
    Bipolar transistors; Boron; Computer science; Electrical resistance measurement; Gold; Implants; Sheet materials; Silicon; Temperature sensors; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
  • Conference_Location
    Nottingham, England
  • Print_ISBN
    0750300655
  • Type

    conf

  • Filename
    5436336
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513935