• DocumentCode
    513972
  • Title

    Ga0.96Al0.04Sb Implanted Avalanche Photodiode; Perspective for a 2.55 μm SAM APD Photodetector

  • Author

    Perotin, M. ; Luquet, H. ; Gouskov, L. ; Abiale-Abi, P. ; Archidi, H. ; Lahbabi, M. ; Mbow, B. ; Perez, A.

  • Author_Institution
    Centre d´´Electronique de Montpellier (UA 391), Université des Sciences et Techniques du Languedoc, Place Eugÿne Bataillon, 34060 MONTPELLIER Cedex 1. FRANCE.
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    393
  • Lastpage
    396
  • Abstract
    Be+ implantation into Liquid Phase Epitaxial n Ga0.96Al0.004Sb has been used in order to study the photodetection characteristics of the resulting p+/n diode, in the multiplication region. The great difference observed between the multiplication in the respective cases of pure electron and hole photoinjections confirms that the room temperature ionization coefficients ratio is very different from unity making this material very promising for an antimonide based Separated Absorption Multiplication Avalanche Photodiode. (SAM APD).
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436584
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513972