DocumentCode
514017
Title
Trends in Heterojunction Silicon Bipolar Transistors
Author
Mertens, R. ; Nijs, J. ; Symons, J. ; Baert, K. ; Ghannam, M.
Author_Institution
Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, B-3030 Leuven, Belgium
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
377
Lastpage
381
Abstract
Different types of bipolar transistor emitters are described. Epitaxial emitters can be achieved by solid phase epitaxial regrowth of polysilicon (at T ≫ 850°C) and recently by glow discharge deposition at T = 250°C and recrystallization (at T = 700°C). Wide band gap emitters and narrow bandgap bases result in very high emitter efficiency which has to be traded-off with emitter and base series resistances.
Keywords
Bipolar transistors; Contact resistance; Crystallization; Heterojunctions; Impurities; Rapid thermal annealing; Reproducibility of results; Silicon; Substrates; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436634
Link To Document