DocumentCode
514032
Title
Narrow-width Effects in Submicron MOS ICs
Author
Klaassen, F.M. ; van der Plas, P.A. ; Debets, R.J.W. ; Wils, N.A.H. ; Pitt, M.G.
Author_Institution
Philips Research Laboratories, P.O. Box 80000, 5600 JA Eindhoven, the Netherlands
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
105
Lastpage
108
Abstract
The effects of an (almost) birds beak free LOCOS isolation configuration on the charactcristics of narrow-width MOSFETs has been investigated by 2-D device simulation and measurements of realized structures. Owing to the occurrence of excess inversion charge peaks at the LOCOS corners, an anomalous behaviour of the subthreshold characteristics and the threshold voltage is observed for device widths smaller than 1 ¿m. In addition a change of the birds beak length with the active area width results in a nonlinear dependence of the gain factor.
Keywords
Area measurement; Birds; Charge measurement; Current measurement; Gain measurement; Length measurement; MOSFETs; Nanoscale devices; Programmable logic arrays; Shape measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436657
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