• DocumentCode
    514035
  • Title

    MESFET Analysis with MINIMOS

  • Author

    Lindorfer, Ph. ; Selberherr, Siegfried

  • Author_Institution
    Institut fÿr Mikroelektronik, Technische Universitÿt Wien, GuÃ\x9fhausstraÃ\x9fe 27-29, A-1040 WIEN, AUSTRIA
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    92
  • Lastpage
    96
  • Abstract
    This paper presents the implementation of models allowint the simulation of silicon as well as GaAs MESFETs with MINIMOS 5- an integrated 2D and 3D device simulator for silicon MOSFETs. Models for the Schottky contact, device geometries and first results are shown.
  • Keywords
    Analytical models; Frequency; Gallium arsenide; MESFETs; MOSFETs; Poisson equations; Schottky barriers; Silicon; Voltage; Winches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436660
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514035