• DocumentCode
    514039
  • Title

    Investigation on P-buried GaAs MESFETs

  • Author

    Shi, Chang-Xin ; Li, Xiao-Ming ; Xin, Shang-Beng

  • Author_Institution
    Institute of Microelectronic Technigue, Shanghai Jiao Tong University, Shanghai 200030, CHINA
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    71
  • Lastpage
    76
  • Abstract
    Alp-buried GaAs MESFET (PB-GaAsMESFET) has been fabricated by means of implanting Be into semi-insultaing GaAs substrates to form a p-type buried layer under the channel-active layer. The experimental results show that PB-GaAs MESFET not only improve the uniformity of the pinch-off voltage but increase the transconductances and reduce the effects of back gate as well. The theoretical analysis and process design of the PB-GaAS MESFET are also presented.
  • Keywords
    Gallium arsenide; Helium; Identity-based encryption; Large Hadron Collider; MESFETs; Tiles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436664
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514039