• DocumentCode
    514051
  • Title

    Characterization of Hot Carrier Trapping in the Gate Oxide of MOSFETs

  • Author

    Mahnkopf, R. ; Przyrembel, G. ; Seifert, W ; Wagemann, H.G.

  • Author_Institution
    Institut fÿr Werkstoffe der Elektrotechnik, der Technischen Universitÿt Berlin, JebensstraÃ\x9fe 1, D-1000 Berlin 12, West-Germany
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    25
  • Lastpage
    28
  • Abstract
    The degradation of MOSFET´s due to hot carrier stress is described quantitatively by trapping of die injected carriers a density of traps NT with a capture cross section ¿. The temperature- and field-dependence of ¿ strongly affects the stress behavior for electron and hole injection. The time dependence of the generation of fixed oxide charge and interface states suggests different mechanisms for both processes.
  • Keywords
    Character generation; Charge carrier processes; Degradation; Electron traps; Hot carriers; Interface states; MOSFETs; Stress; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436679
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514051