• DocumentCode
    514075
  • Title

    Leakage Currents in Low Temperature Processed Polycrystalline-Si TFTs

  • Author

    Brotherton, S.D. ; Young, N.D. ; Gill, A

  • Author_Institution
    Philips Research Laboratories, Redhill, Surrey, U.K.
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    671
  • Lastpage
    674
  • Abstract
    The influence of plasma hydrogenation on the leakage current of n-channel poly-Si TFTs has been examined. With low temperature processed devices, the major effect has been the suppression of gate controlled hole currents as a result of the increase in carrier generation lifetime. This has also resulted in a complementary increase in optical sensitivity.
  • Keywords
    Dielectrics; Grain boundaries; Leakage current; Plasma devices; Plasma immersion ion implantation; Plasma measurements; Plasma properties; Plasma temperature; Temperature measurement; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436718
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514075