DocumentCode
514130
Title
Physical modelling problems of ultrafast silicon bipolar transistors
Author
de Graaff, H.C. ; Hurkx, G.A.M.
Author_Institution
Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
503
Lastpage
506
Keywords
Bipolar transistors; Capacitance; Current measurement; Cutoff frequency; Doping; Electron mobility; Hot carriers; Laboratories; Photonic band gap; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436787
Link To Document