• DocumentCode
    516436
  • Title

    Novel High Performance Complementary CAM/RAM Circuits

  • Author

    Haraszti, T.P.

  • Author_Institution
    Microcirc Associates, Newport Beach, California, U.S.A.
  • fYear
    1985
  • fDate
    16-18 Sept. 1985
  • Firstpage
    237
  • Lastpage
    240
  • Abstract
    Novel complementary CAM/RAM circuits feature very short access time (3.4 nsec), high density (6 and 8 minimum size device/cell) and radiation hardness (1 × 106 rad (Si)) in a hierarchical organization of 4k bit memory modules. The design utilizes innovative static memory cells and operating scheme, optimized fault-tolerant modular architecture and 1.25-2¿m advanced CMOS VLSI process.
  • Keywords
    CADCAM; Circuits; Computer aided manufacturing; Fault tolerance; Random access memory; Read-write memory; Temperature sensors; Threshold voltage; Very large scale integration; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1985. ESSCIRC '85. 11th European
  • Conference_Location
    Toulouse, France
  • Type

    conf

  • Filename
    5468089
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=516436