DocumentCode
516473
Title
A New On-Chip Voltage Converter for Submicron High-Density DRAMs
Author
Furuyama, Tohru ; Watanabe, Yohji ; Ohsawa, Takashi ; Watanabe, Shigeyoshi
Author_Institution
Semiconductor Device Engineering Lab., Toshiba Corp., 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
fYear
1986
fDate
16-18 Sept. 1986
Firstpage
10
Lastpage
12
Abstract
A new on-chip voltage converter has been developed, and its characteristics have been examined. Being implemented in an experimental 4Mb dynamic RAM, this voltage converter has successfully demonstrated to be of importance for high-density, high-speed, and high-reliability DRAMs with submicron transistors.
Keywords
Character generation; Clocks; Equivalent circuits; MOSFETs; Mirrors; Power generation; Semiconductor device reliability; Semiconductor optical amplifiers; Standby generators; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1986. ESSCIRC '86. Twelfth European
Conference_Location
Delft, The Netherlands
Type
conf
Filename
5468243
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