DocumentCode
516494
Title
Matching properties of MOS transistors
Author
Pelgrom, Marcel J M ; Duinmaijer, Aad C.J.
Author_Institution
Philips Research Laboratories, Eindhoven, the Netherlands.
fYear
1988
fDate
21-23 Sept. 1988
Firstpage
327
Lastpage
330
Abstract
The matching properties of the threshold voltage, substrate factor and current factor of MOS transistors have been analysed and measured. Improvements of the existing theory are given, as well as extensions for long distance matching and rotation of devices. The matching results have been verified by measurements and calculations on a band-gap reference circuit.
Keywords
Analysis of variance; Circuits; Current measurement; Digital-analog conversion; Equations; Laboratories; MOSFETs; Photonic band gap; Semiconductor device modeling; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1988. ESSCIRC '88. Fourteenth European
Conference_Location
Manchester, UK
Type
conf
Filename
5468276
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