DocumentCode
516618
Title
3D Double-Lambda-Diode VLSI SRAM Cells
Author
McGonigal, Gordon C. ; Elmasry, Mohamed I.
Author_Institution
Department of Electrical Engineering, University of Waterloo, Waterloo, Ontario, Canada, N2L 3G1
fYear
1988
fDate
21-23 Sept. 1988
Firstpage
86
Lastpage
90
Abstract
A three-dimensional (3D) implementation of the double-lambda-diode SRAM cell is proposed. It is shown that this cell provides greater noise immunity, but requires approximately the same area, as the conventional resistive-load cell.
Keywords
CMOS technology; Circuit noise; Driver circuits; Dynamic voltage scaling; Integrated circuit interconnections; MOS devices; Random access memory; Stacking; Threshold voltage; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1988. ESSCIRC '88. Fourteenth European
Conference_Location
Manchester, UK
Type
conf
Filename
5468425
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