DocumentCode
516851
Title
GaAs Dynamic Digital IC´s for Applications Up to 10 GHz
Author
Rocchi, Marc
Author_Institution
Labs. d´´ Electron. et de Phys. Appl., Limeij -Brevannes, France
fYear
1982
fDate
22-24 Sept. 1982
Firstpage
130
Lastpage
133
Abstract
To evaluate the potentiality of GaAs MESFET´s as transmitting gates, dynamic T flip-flops have been fabricated using a self-aligned planar process. The maximum operating frequency is 10.2 GHz which is the best speed performance ever reported for a digital circuit. The performance of the transmitting gates within the circuit are discussed in details. Speed improvement and topological simplification of fully static LSI subsystems are investigated.
Keywords
III-V semiconductors; Schottky gate field effect transistors; digital integrated circuits; flip-flops; gallium arsenide; large scale integration; logic gates; GaAs; GaAs MESFET; dynamic T flip-flops; dynamic digital integrated circuit; fully static LSI subsystems; self-aligned planar process; topological simplification; transmitting gates; Application specific integrated circuits; Capacitance; Digital integrated circuits; Frequency conversion; Gallium arsenide; Impedance; Logic; MESFET integrated circuits; Pulse inverters; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1982. ESSCIRC '82. Eighth European
Conference_Location
Brussels
Type
conf
Filename
5468854
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