• DocumentCode
    516953
  • Title

    High-Voltage DIMOS Driver Circuit

  • Author

    Pomper, M. ; Leipold, L. ; Tihanyi, J. ; Longo, H.-E.

  • Author_Institution
    Siemens AG, Research Laboratories and Components Group, Munich, W.-Germany
  • fYear
    1979
  • fDate
    18-21 Sept. 1979
  • Firstpage
    39
  • Lastpage
    41
  • Abstract
    High-voltage output driver circuits realized with double implanted MOS (DIMOS) transistors are presented. Breakdown voltages exceed 100V. Dynamic bootstrap techniques resulted in circuits combining low power (5mW) and fast switching times (150ns) at typical operating conditions of 50V, 5OpF and 16kHz.
  • Keywords
    Breakdown voltage; CMOS logic circuits; Costs; Driver circuits; Laboratories; Logic circuits; MOSFETs; Switched capacitor circuits; Switches; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference - ESSCIRC 79, Fifth European
  • Conference_Location
    Southampton, UK
  • Print_ISBN
    0-85296-208-8
  • Type

    conf

  • Filename
    5468972
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=516953