DocumentCode
517260
Title
CMOS-Microwave Wideband Amplifiers and Mixers on SIMOX-Substrates
Author
Eggert, D. ; Barthel, W. ; Budde, W. ; Jentschel, H.-J. ; Richter, R. ; Sawade, F.
Author_Institution
Fraunhofer-Institute of Microelectronic Circuits and Systems -IMS2- Dresden, Grenzstr. 28, 01109 Dresden
fYear
1995
fDate
19-21 Sept. 1995
Firstpage
302
Lastpage
305
Abstract
Today´s technologies exhibit excellent performance for specific applications, e.g. CMOS for VLSI circuits, bipolar for precision analog signal processing, and GaAs for very high speed circuits. In future telecommunication products the monolithic integration of many of these functions will be mandatory. An improved CMOS-technology on silicon-on-insulator (SOI) substrates which allows the realization of RF-system components has been developed. In this contribution we present a 7dB, 0-4,5GHz bandwidth CMOS distributed amplifier and a 1GHz CMOS-mixer intended for use in RF-applications.
Keywords
Bandwidth; Broadband amplifiers; CMOS analog integrated circuits; CMOS process; CMOS technology; Gallium arsenide; Monolithic integrated circuits; Signal processing; Silicon on insulator technology; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1995. ESSCIRC '95. Twenty-first European
Conference_Location
Lille, France
Print_ISBN
2-86332-180-3
Type
conf
Filename
5469396
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