DocumentCode
520036
Title
GaSb-based semiconductor disk lasers for the 2 – 3 µm wavelength range: Versatile lasers for high-power and narrow linewidth emission
Author
Rattunde, M. ; Rösener, B. ; Kaspar, S. ; Moser, R. ; Manz, C. ; Köhler, K. ; Wagner, J.
Author_Institution
Fraunhofer Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
2
Abstract
Highly efficient GaSb-based semiconductor-disk-lasers in the 1.9-2.8 μm range have been fabricated. They reach output powers >3W in CW-operation at room temperature . By using intracavity filters, single-frequency emission with a linewidth below 2.3 MHz was achieved.
Keywords
III-V semiconductors; gallium compounds; laser cavity resonators; semiconductor lasers; GaSb; intracavity filters; semiconductor disk lasers; single-frequency emission; temperature 293 K to 298 K; wavelength 1.9 mum to 3 mum; Fiber lasers; Filters; Gas lasers; Laser excitation; Laser modes; Power generation; Power lasers; Pump lasers; Semiconductor lasers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5499595
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