• DocumentCode
    520172
  • Title

    Internal quantum efficiency measurement in InGaN/GaN UV LEDs with patterned sapphire substrate by photoluminescence and electroluminescence method

  • Author

    Wang, C.H. ; Chiu, C.H. ; Ke, C.C. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C.

  • Author_Institution
    Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Internal quantum efficiency (IQE) of InGaN-based ultraviolet light emitting diodes (LED) grown on patterned sapphire substrate (PSS) and flat sapphire were measured by photoluminescence and electroluminescence methods. The IQE improvement of PSS LED is significant.
  • Keywords
    III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting diodes; photoluminescence; sapphire; wide band gap semiconductors; InGaN-GaN; electroluminescence method; internal quantum efficiency measurement; patterned sapphire substrate; photoluminescence method; ultraviolet light emitting diodes; Biological materials; Biomedical optical imaging; Charge carrier density; Electroluminescence; Gallium nitride; Light emitting diodes; Optical sensors; Photoluminescence; Stimulated emission; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5499736
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=520172