DocumentCode
520436
Title
Rate equation analysis of quantum dot population in InAs/GaAs laser structures
Author
O´Driscoll, I. ; Blood, P. ; Smowton, P.M.
Author_Institution
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
fYear
2010
fDate
16-21 May 2010
Firstpage
1
Lastpage
2
Abstract
Using a rate equation model we quantitatively reproduce experimental results showing the transition from random to thermal population across the whole temperature range and measure the impact on laser operation.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; InAs-GaAs; laser structures; quantum dot population; rate equation analysis; thermal population; Absorption; Electrons; Equations; Gain measurement; Gallium arsenide; Laser modes; Laser transitions; Phonons; Quantum dot lasers; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5500014
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