• DocumentCode
    520757
  • Title

    Thin-film lasers embedded in passively aligned SU-8 waveguides on SiO2/Si

  • Author

    Palit, Sabarni ; Kirch, Jeremy ; Mawst, Luke ; Jokerst, Nan M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Duke Univ., Durham, NC, USA
  • fYear
    2010
  • fDate
    16-21 May 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A thin film GaAs based edge emitting laser is bonded to silicon, with one facet embedded in a passively aligned polymer waveguide. Jth = 260 A/cm2 at λ=1002.5 nm is achieved for this integrated system.
  • Keywords
    III-V semiconductors; gallium arsenide; optical polymers; optical waveguides; semiconductor lasers; silicon compounds; GaAs; SU-8 waveguides; SiO2-Si; polymer waveguide; thin film based edge emitting laser; thin-film lasers; wavelength 1002.5 nm; Gallium arsenide; III-V semiconductor materials; Optical waveguides; Semiconductor lasers; Semiconductor thin films; Silicon; Threshold current; Transistors; Waveguide discontinuities; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-890-2
  • Electronic_ISBN
    978-1-55752-890-2
  • Type

    conf

  • Filename
    5500352