Growth and Characterization of GaAs/AlGaAs Core-Multishell Nanowires by Metalorganic Chemical Vapor Deposition

Author

Guo, Jingwei ; Huang, Hui ; Ye, Xian ; Ren, Xiaomin ; Cai, Shiwei ; Wang, Wei ; Wang, Qi ; Huang, Yongqing

Author_Institution

Key Lab. of Inf. Photonics & Opt. Commun. Minist. of Educ., Beijing Univ. of Posts & Telecommun., Beijing, China

fYear

2010

fDate

19-21 June 2010

Firstpage

1

Lastpage

4

Abstract

We have investigated the growth and photoluminescence (PL) characteristics of GaAs/AlGaAs core-multishell nanowires (NWs). Theses NWs are grown by means of vapor-liquid-solid (VLS) method for cores growth and metalorganic chemical vapor deposition (MOCVD) for multishell growth on GaAs (111)B substrate. The crystallographic quality is perfect in the body of GaAs/AlGaAs core-multishell NWs and a small axial elongation with some defects at the top of NWs was also achieved. The PL spectra reveal that GaAs/AlGaAs core-multishell NWs have much higher optical efficiency than bare GaAs NWs.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; nanofabrication; nanowires; photoluminescence; semiconductor growth; semiconductor quantum wires; GaAs-AlGaAs; axial elongation; core-multishell nanowires; metalorganic chemical vapor deposition; optical efficiency; photoluminescence; vapor-liquid-solid method; Chemical vapor deposition; Gallium arsenide; Gold; MOCVD; Nanowires; Optical surface waves; Scanning electron microscopy; Substrates; Temperature; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronic (SOPO), 2010 Symposium on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-4963-7

Electronic_ISBN

978-1-4244-4964-4

Type

conf

DOI

10.1109/SOPO.2010.5504052

Filename

5504052