DocumentCode
521714
Title
Luminescence Properties of Oxidized Si-rich Amorphous Silicon Nitride Films
Author
Huang, R. ; Wang, X. ; Song, J. ; Guo, Y.Q. ; Wang, D.Q. ; Dong, H.P. ; Chen, K.J. ; Xu, J.
Author_Institution
Dept. of Phys. & Electr. Eng., Hanshan Normal Univ., Chaozhou, China
fYear
2010
fDate
19-21 June 2010
Firstpage
1
Lastpage
3
Abstract
Luminescence properties of the oxidized Si-rich SiNx films prepared at low temperature were investigated. Strong photoluminescence from the samples can be observed at room temperature. The spectral profile exhibits some obviously modulated features upon the excited wavelength. By employing the oxidized Si-rich SiNx films as the luminescent active layers, the devices with low turn-on voltage have also been demonstrated.
Keywords
amorphous state; photoluminescence; silicon compounds; thin films; SiN:O; luminescence properties; luminescent active layers; oxidized amorphous silicon nitride films; photoluminescence; spectral profile; temperature 293 K to 298 K; Amorphous silicon; Charge carrier processes; Low voltage; Luminescence; Nanocrystals; Photoluminescence; Physics; Radio frequency; Semiconductor films; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics and Optoelectronic (SOPO), 2010 Symposium on
Conference_Location
Chengdu
Print_ISBN
978-1-4244-4963-7
Electronic_ISBN
978-1-4244-4964-4
Type
conf
DOI
10.1109/SOPO.2010.5504419
Filename
5504419
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