• DocumentCode
    525101
  • Title

    Design of a 54 to 63 GHz differential common collector SiGe Colpitts VCO

  • Author

    Barghouthi, Atheer ; Ellinger, Frank

  • Author_Institution
    Dept. of Circuit Design & Network Theor., Dresden Univ. of Technol., Dresden, Germany
  • fYear
    2010
  • fDate
    14-16 June 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The design of a 60 GHz differential common collector Colpitts VCO in SiGe HBT technology with 180 GHz ft is presented. The impact of parasitics on the negative resistance is evaluated and an extension regarding existing design equations is derived. Within a wide tuning range from 54.1 to 62.7 GHz, a phase noise performance between -98 and -90 dBc/Hz is measured at 1 MHz offset. To the knowledge of the authors this is the best phase noise performance of a 60 GHz VCO in silicon yielding such a high tuning bandwidth. At a dc voltage of 2 V and a dc current of 14 mA, the output power amounts to -5 ± 1 dBm.
  • Keywords
    Bandwidth; Electrical resistance measurement; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Noise measurement; Phase measurement; Phase noise; Silicon germanium; Voltage-controlled oscillators; Colpitts; HBT; VCO; frequency synthesizer; negative resistance; phase noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Radar and Wireless Communications (MIKON), 2010 18th International Conference on
  • Conference_Location
    Vilnius, Lithuania
  • Print_ISBN
    978-1-4244-5288-0
  • Type

    conf

  • Filename
    5540510