DocumentCode
525922
Title
New VDMOS structure with Discontinuous Thick Inter-Body Oxide to reduce gate-to-drain charge
Author
Roig, J. ; Mouhoubi, S. ; Gassot, P. ; Charavel, R. ; Suvkhanov, A. ; Moens, P. ; Bauwens, F. ; Tack, M.
Author_Institution
Power Technol. Centre - Corp. R&D, ON Semicond., Oudenaarde, Belgium
fYear
2010
fDate
6-10 June 2010
Firstpage
397
Lastpage
400
Abstract
A new vertical power MOSFET (VDMOS) structure with a Discontinuous Thick Inter-Body Oxide (DTIBO) is presented and experimentally analyzed in this paper. The new structure substantially reduces the Qgd*sRon figure-of-merit without excessive BVds penalization with respect to the conventional VDMOS. Moreover, the undesired hot-carried injection (HCI) effects are also assessed.
Keywords
hot carriers; power MOSFET; VDMOS structure; discontinuous thick interbody oxide; vertical power MOSFET; Human computer interaction; MOSFET circuits; Power MOSFET;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location
Hiroshima
ISSN
1943-653X
Print_ISBN
978-1-4244-7718-0
Electronic_ISBN
1943-653X
Type
conf
Filename
5544028
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