DocumentCode
526039
Title
Deep melt activation using laser thermal annealing for IGBT thin wafer technology
Author
Gutt, Thomas ; Schulze, Holger
Author_Institution
Infineon Technol. AG, Neubiberg, Germany
fYear
2010
fDate
6-10 June 2010
Firstpage
29
Lastpage
32
Abstract
A new method of activating the backside Emitter of an IGBT or a freewheeling Diode will be introduced. A high power UV Laser is used to activate a 1, 5 cm × 1, 5 cm area with one single laser shot. This allows a process improvement for thin wafer for IGBT and Diodes in the 600 V - 1200 V range. The process is a major step in further shrinking the device thickness and thereby reducing the on state voltage and the switching losses.
Keywords
insulated gate bipolar transistors; laser beam annealing; semiconductor diodes; IGBT thin wafer technology; deep melt activation; freewheeling diode; high power UV laser; laser thermal annealing; voltage 600 V to 1200 V; Annealing; Insulated gate bipolar transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location
Hiroshima
ISSN
1943-653X
Print_ISBN
978-1-4244-7718-0
Electronic_ISBN
1943-653X
Type
conf
Filename
5544709
Link To Document