Computer simulation for electroluminescence efficiency and multi-peak structure of nano-porous oxidized silicon photodiode

Based on the semiconductor heterojunction theory and three-layer model of Si-SiO₂, the expressions of electroluminescence intensity ratio of interface layer to silicon core were deduced. The result can explain the low electroluminescence efficiency and the phenomenon of multi electroluminescence peak of nano-porous oxidized silicon well. Simulation results show that: 1) ΔE has a great influence on the recombination efficiency. The recombination efficiency of carriers in the heterojunction boundary is higher than other reigns. 2) Core and the interlayer can electroluminescence both, the apparent of luminescence peak position of nano-porous oxidized silicon photodiode and the phenomenon of multi-emission peak depend on the band gap difference of core and interlayer. The proposed methodologies in this paper have benefits on realizing full silicon-based optoelectronic integrated circuits.