Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation

Author

Noudéviwa, A. ; Roelens, Y. ; Danneville, F. ; Olivier, A. ; Wichmann, N. ; Waldhoff, N. ; Lepilliet, S. ; Dambrine, G. ; Desplanque, L. ; Wallart, X. ; Bellaiche, J. ; Smith, D. ; Maher, H. ; Bollaert, S.

Author_Institution

IEMN, Univ. de Lille I, Villeneuve-d´´Ascq, France

fYear

2010

fDate

27-28 Sept. 2010

Firstpage

286

Lastpage

289

Abstract

We present in this paper, a study of Dc, RF and Noise characteristics of an industrial metamorphic HEMT (High Electron Mobility Transistor) operating under low voltage at cryogenic temperature. The results at 300K are compared with the obtained results at cryogenic temperature. Temperature decrease makes device characteristics improve. This improvements allow to expect to develop a low power cryogenic electronic (LNA), featuring high frequency/noise performances below 100 mV DC biasing.

Keywords

cryogenic electronics; high electron mobility transistors; low-power electronics; radiofrequency integrated circuits; DC characteristics; RF characteristics; cryogenic temperature; high electron mobility transistor; industrial metamorphic HEMT; low power cryogenic electronic; low voltage operation; noise characteristics; temperature 300 K; Cryogenics; HEMTs; Microwave amplifiers; Microwave circuits; Microwave integrated circuits; Noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7231-4

Type

conf

Filename

5613662