• DocumentCode
    531363
  • Title

    Microwave characterization of PZT/ZrO2 thin films

  • Author

    Min, Deokki ; Hoivik, Nils ; Jensen, Geir Uri ; Hanke, Ulrik

  • Author_Institution
    Inst. of Micro- & Nanosystems Technol., Vestfold Univ. Coll., Tønsberg, Norway
  • fYear
    2010
  • fDate
    28-30 Sept. 2010
  • Firstpage
    1579
  • Lastpage
    1582
  • Abstract
    Dielectric properties of a two-layer of PZT/ZrO2 thin film have been characterized up to 50 GHz using the conformal mapping method. PZT/ZrO2 films are of interest to RF MEMS capacitive shunt switches due to the relatively high dielectric constant. In this measurement, relative dielectric constant values of approximately 120 and 200 were obtained at 50 GHz for the PZT/ZrO2 film and PZT film on ZrO2, respectively. Corrected loss tangents of 0.06 and 0.03 were obtained at 25 GHz for PZT/ZrO2 and single ZrO2, respectively.
  • Keywords
    conformal mapping; dielectric losses; ferroelectric thin films; high-k dielectric thin films; lead compounds; micromechanical devices; microwave measurement; permittivity; zirconium compounds; PZT-ZrO2; RF MEMS capacitive shunt switches; conformal mapping method; corrected loss tangents; dielectric constant; dielectric thin films; frequency 50 GHz; microwave characterization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2010 European
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-7232-1
  • Type

    conf

  • Filename
    5616180
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=531363