• DocumentCode
    531509
  • Title

    Performance improvements of KTN ferroelectric thin films for microwave tunable devices

  • Author

    Zhang, Ling Yan ; Simon, Quentin ; Laurent, Paul ; Martin, Noham ; Bouquet, Valérie ; Députier, Stéphanie ; Guilloux-viry, Maryline ; Tanné, Gérard

  • Author_Institution
    Univ. Europeenne de Bretagne, Brest, France
  • fYear
    2010
  • fDate
    28-30 Sept. 2010
  • Firstpage
    1202
  • Lastpage
    1205
  • Abstract
    The investigations reported in this paper constitute three solutions for enhancement of KTa1-xNbxO3 (KTN) ferroelectric material performances displayed by microwave tunable devices. Quasi-epitaxial KTN films with strongly improved microwave performances (especially tunability) were grown on R-sapphire substrates through the use of KNbO3 seed layers. Doping of the KTN layer with two different compounds through either Ti substitution or MgO addition led to a significant reduction of the KTN dielectric losses. This study deals also with the influence of the microwave characteristics upon the KTN-based tunable devices through comparison of Chemical Solution- and Pulsed Laser-Depositions.
  • Keywords
    dielectric losses; ferroelectric thin films; microwave devices; substrates; KTN dielectric losses; KTN ferroelectric thin films; R-sapphire substrates; ferroelectric material performances; microwave characteristics; microwave tunable devices; performance improvements; quasiepitaxial KTN films; strongly improved microwave performances;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2010 European
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-7232-1
  • Type

    conf

  • Filename
    5616385
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=531509