DocumentCode
534084
Title
Electrically programmed tellurium based thin-film memory element
Author
Kolosnitsin, B.S.
Author_Institution
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
819
Lastpage
820
Abstract
Transition of thin film memory element based on tellurium in a metastable state with quasimetallic conductivity is followed by structural transformations, which leads to a charge ordering of electron density as a result of reallocation of atoms with different valences. The memory effects in these structures are conditioned by cooperative effects of interacting dipole complexes.
Keywords
electric charge; electron density; elemental semiconductors; semiconductor thin films; tellurium; atom reallocation; charge ordering; electron density; interacting dipole complexes; memory effect; metastable state; quasimetallic conductivity; structural transformation; thin film memory element; Conductivity; Electric potential; Electronic mail; Fluctuations; Ions; Materials; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632948
Filename
5632948
Link To Document