• DocumentCode
    53604
  • Title

    IGBT-Gating Failure Effect on a Fault-Tolerant Predictive Current-Controlled Five-Phase Induction Motor Drive

  • Author

    Guzman, Hugo ; Barrero, F. ; Duran, Mario J.

  • Author_Institution
    Electr. Eng. Dept., Univ. of Malaga, Málaga, Spain
  • Volume
    62
  • Issue
    1
  • fYear
    2015
  • fDate
    Jan. 2015
  • Firstpage
    15
  • Lastpage
    20
  • Abstract
    Multiphase machine drives are gaining importance in high-reliability applications due to their fault-tolerance capability and their ability to cope with the postfault operation without any extra electronic components. Predictive current controllers have been recently proposed for managing postfault operation of these drives when an open-phase fault is considered. However, the faulty situation assumes zero stator current while freewheeling diodes can continue conducting in a noncontrolled mode. This work analyzes the postfault operation of the five-phase drive when the freewheeling diodes of the faulty phase are still conducting. Experimental results are provided using a conventional insulated-gate bipolar transistor (IGBT)-based multiphase power converter to quantify the effect of the freewheeling diodes, when an IGBT-gating fault occurs, on the model-based predictive current-controlled drive.
  • Keywords
    electric current control; failure analysis; induction motor drives; insulated gate bipolar transistors; machine control; predictive control; IGBT-gating failure effect; electronic components; fault-tolerance capability; fault-tolerant predictive current-controlled five-phase induction motor drive; faulty phase; faulty situation; five-phase drive; freewheeling diodes; high-reliability applications; insulated-gate bipolar transistor; model-based predictive current-controlled drive; multiphase machine drives; multiphase power converter; noncontrolled mode; open-phase fault; post-fault operation; predictive current controllers; zero stator current; Fault tolerance; Fault tolerant systems; Insulated gate bipolar transistors; Stators; Switches; Torque; Vectors; Fault tolerance; freewheeling diodes; insulated-gate bipolar transistor (IGBT)-gating fault (IGBT-GF); multiphase drives; postfault operation; predictive controllers;
  • fLanguage
    English
  • Journal_Title
    Industrial Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0046
  • Type

    jour

  • DOI
    10.1109/TIE.2014.2331019
  • Filename
    6834808