DocumentCode
539442
Title
Investigation and solution of bump-like killer defects
Author
Xiao, Hong ; Jau, Jack ; Kai-Ping, Huang ; Seng, Tan Yong ; Hock, Patrick Koh Guan
Author_Institution
Hermes Microvision, Inc., 1762 Automation Parkway, San Jose, California 95131, USA
fYear
2008
fDate
27-29 Oct. 2008
Firstpage
83
Lastpage
86
Abstract
In this study, we investigated the root cause of the conducting bump defects detected by optical inspection system that had the same signature as sampling pattern of electron beam inspection (EBI) at tungsten (W) chemical mechanical polish (CMP) and at copper (Cu) CMP. We found that the bump defects were formed due to the combined effects of EBI and de-ionized (DI) water clean right after EBI. Model of micro plating was proposed and experiment results agreed with the model. We also propose the solution to avoid the yield killing bump defects in future EBI applications.
Keywords
Copper; Dielectrics; Inspection; Silicon compounds; Surface cleaning;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location
Tokyo, Japan
ISSN
1523-553X
Electronic_ISBN
1523-553X
Type
conf
Filename
5714964
Link To Document