Low Temperature Processed Two-Transistor- Two-Capacitor-Based Ferroelectric Random Access Memory

Author

Duo Mao ; Mejia, I. ; Salas-Villasenor, Ana L. ; Stiegler, Harvey J. ; Gnade, Bruce E. ; Quevedo-Lopez, Manuel A.

Author_Institution

Micron Technol. Inc., Boise, ID, USA

Volume

61

Issue

10

fYear

2014

fDate

Oct. 2014

Firstpage

3442

Lastpage

3447

Abstract

We have demonstrated a low temperature fully integrated process for a ferroelectric random access memory array for potential flexible electronics applications. The memory cell is based on a two-transistor-two-capacitor structure, with cadmium sulfide as the semiconductor material for n-channel thin-film transistors, and poly(vinylidene fluoride-trifluoroethylene) copolymer as the ferroelectric material for capacitors. At VDD = 5 V, a voltage difference of ~1 V between the two states (0 and 1) is achieved at the output of the sense amplifier.

Keywords

II-VI semiconductors; cadmium compounds; capacitors; ferroelectric materials; ferroelectric storage; flexible electronics; polymer blends; random-access storage; thin film transistors; CdS; copolymers; ferroelectric material; ferroelectric random access memory; flexible electronics; n-channel thin film transistors; sense amplifier; two-transistor-two-capacitor structure; voltage 5 V; Arrays; Capacitors; Ferroelectric films; Microprocessors; Nonvolatile memory; Random access memory; Cadmium sulfide (CdS); ferroelectric; ferroelectric random access memory array (FRAM); flexible electronics; low temperature; poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]; two-transistor-two-capacitor (2T2C);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2347053

Filename

6891241