Design and Simulate of ECC Circuit for Multilevel Flash Memory

Author

Wang, Zhanhe ; Zhang, Jinfeng ; Ge, Yan

Author_Institution

Dept. of Electron. Eng., Beijing Inst. of Technol., Beijing, China

Volume

1

fYear

2010

fDate

13-14 Oct. 2010

Firstpage

536

Lastpage

538

Abstract

It is easy to make mistakes in multilevel flash memories than traditional flash memories, due to the reduced spacing between adjacent threshold voltage, reliability issues turn out to be more critical in multilevel flash memories. But, actual correction only can correct one bit error in flash memory, it cann´t meet the need of multilevel flash memory. This paper present a new correction circuitry which use the error correction code, the correction ability of it is improved, thereby the reliability of multilevel flash is increased.

Keywords

error correction codes; flash memories; integrated circuit design; integrated circuit reliability; integrated memory circuits; ECC circuit; adjacent threshold voltage; correction circuitry; error correction code techniques; multilevel flash memories; multilevel flash reliability; Encoding; Error correction codes; Flash memory; Integrated circuit modeling; Integrated circuit reliability; Threshold voltage; ECC; multilevel flash; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Intelligent System Design and Engineering Application (ISDEA), 2010 International Conference on

Conference_Location

Changsha

Print_ISBN

978-1-4244-8333-4

Type

conf

DOI

10.1109/ISDEA.2010.286

Filename

5743238