Visible and UV Raman scattering study of lattice recovery on Ti implanted silicon layers

Author

Pastor, D. ; Olea, J. ; del Prado, A. ; García-Hemme, E. ; Mártil, I. ; González-Díaz, G. ; Ibánez, J. ; Cuscó, R. ; Artus, L.

Author_Institution

Dipt. de Fis. Aplic. III (Electr. y Electron.), Univ. Complutense de Madrid., Madrid, Spain

fYear

2011

fDate

8-11 Feb. 2011

Firstpage

1

Lastpage

4

Abstract

We present a structural characterization by means of Raman scattering measurements of Si layers implanted with very high doses of Ti⁺ ions. After implantation the layers were pulsed laser melted (PLM) to recover the lattice crystal and looking for the intermediate band (IB) formation. The Raman spectra permit us to evaluate the degree of crystallinity for the different implanted doses and detect the Ti lattice presence. We discuss, based on the laser line excitation (visible or UV), the probe depth to assess the crystal quality only in the implanted layers.

Keywords

Raman spectra; crystal structure; doping profiles; elemental semiconductors; ion implantation; laser beam effects; melting; semiconductor doping; silicon; titanium; ultraviolet spectra; visible spectra; Raman scattering; Si:Ti; crystallinity; intermediate band formation; ion implantaion; laser line excitation; lattice crystal recovery; pulsed laser melting; structural property; titanium implanted silicon layers; ultraviolet spectroscopy; visible spectroscopy; Annealing; Crystals; Laser excitation; Lattices; Raman scattering; Silicon; Intermediate Band; Raman; Silicon; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2011 Spanish Conference on

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4244-7863-7

Type

conf

DOI

10.1109/SCED.2011.5744151

Filename

5744151