• DocumentCode
    542420
  • Title

    Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs

  • Author

    Rodilla, H. ; Gonzalez, T. ; Mateos, J. ; Moschetti, G. ; Grahn, J.

  • Author_Institution
    Dipt. Fis. Aplic., Univ. de Salamanca, Salamanca, Spain
  • fYear
    2011
  • fDate
    8-11 Feb. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this work, by means of Monte Carlo simulations, the static and dynamic performance of InAs/AlSb HEMTs at low drain voltages is analyzed. A very good agreement between experimental and simulation results has been obtained not only for the static behavior, but also for small signal equivalent circuit parameters like Cgs, Cgd, ft and fc. Problems arise when trying to reproduce the values of gd and Cds due to the experimental frequency dispersion, leading also to discrepancies in the values obtained for the intrinsic gm and also fmax.
  • Keywords
    Monte Carlo methods; high electron mobility transistors; Monte Carlo simulations; isolated-gate HEMT; low drain voltages; HEMTs; Integrated circuit modeling; Logic gates; MODFETs; Monte Carlo methods; Solid modeling; InAs/AlSb HEMTs; Monte Carlo simulations; device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2011 Spanish Conference on
  • Conference_Location
    Palma de Mallorca
  • Print_ISBN
    978-1-4244-7863-7
  • Type

    conf

  • DOI
    10.1109/SCED.2011.5744234
  • Filename
    5744234
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=542420